Discrete Semiconductor Products

SQJ433EP-T1_GE3

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MOSFET P-CH 30V 75A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET P-CH 30V 75A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ433EP-T1_GE3

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	108 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4877 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	83 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8.1 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Grade	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SQJ433EP-T1_GE3	8.1 mOhm	Automotive	30 V	MOSFET (Metal Oxide)	Surface Mount	83 W	75 A	PowerPAK® SO-8	-55 °C	175 ░C	P-Channel	2.5 V	4.5 V 10 V	AEC-Q101	4877 pF	20 V	PowerPAK® SO-8	108 nC

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General part information

P-Channel 30 V 75A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources