Discrete Semiconductor Products
SSM6L820R,LF
ActiveToshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 30 V/-20 V, 4 A/-4 A, 0.0391 Ω@4.5V/0.045 Ω@10V, TSOP6F
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
SSM6L820R,LF
ActiveToshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 30 V/-20 V, 4 A/-4 A, 0.0391 Ω@4.5V/0.045 Ω@10V, TSOP6F
Technical Specifications
Parameters and characteristics for this part
| Specification | SSM6L820R,LF |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 30 V, 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.7 nC, 3.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF, 480 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 6-SMD, Flat Leads |
| Power - Max [Max] | 1.4 W |
| Rds On (Max) @ Id, Vgs | 45 mOhm, 39.1 mOhm |
| Supplier Device Package | 6-TSOP-F |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2 V, 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SSM6L820R Series
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 30 V/-20 V, 4 A/-4 A, 0.0391 Ω@4.5V/0.045 Ω@10V, TSOP6F
Documents
Technical documentation and resources
