
Discrete Semiconductor Products
BYVF32-200HE3_A/P
ActiveVishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 18A ITO220AB

Discrete Semiconductor Products
BYVF32-200HE3_A/P
ActiveVishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 18A ITO220AB
Technical Specifications
Parameters and characteristics for this part
| Specification | BYVF32-200HE3_A/P |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 18 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 25 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | ITO-220AB |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 2000 | $ 0.87 | |
Description
General part information
BYVF32 Series
Diode Array 1 Pair Common Cathode 200 V 18A Through Hole TO-220-3 Full Pack, Isolated Tab
Documents
Technical documentation and resources