Discrete Semiconductor Products

IRFM210BTF_FP001

Obsolete

MOSFET N-CH 200V 770MA SOT223-4

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 770MA SOT223-4

Technical Specifications

Parameters and characteristics for this part

Specification	IRFM210BTF_FP001

Current - Continuous Drain (Id) @ 25°C	770 mA
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.3 nC
Input Capacitance (Ciss) (Max) @ Vds	225 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	SOT-223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)
ON Semiconductor IRFM210BTF_FP001	SOT-223-4	2 W	9.3 nC	TO-261-4 TO-261AA	MOSFET (Metal Oxide)	10 V	770 mA	225 pF	N-Channel	200 V	Surface Mount	-55 °C	150 °C	1.5 Ohm	4 V	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 770mA (Tc) 2W (Ta) Surface Mount SOT-223-4

Technical documentation and resources