Discrete Semiconductor Products

GBJ2510S-BP

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BRIDGE RECT 1PHASE 1KV 25A GBJ

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Discrete Semiconductor Products

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BRIDGE RECT 1PHASE 1KV 25A GBJ

Technical Specifications

Parameters and characteristics for this part

Specification	GBJ2510S-BP

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-SIP, GBJ
Supplier Device Package	GBJ
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1 V
Voltage - Peak Reverse (Max) [Max]	1000 V

Part	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Diode Type	Package / Case	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Voltage - Peak Reverse (Max) [Max]	Voltage - Peak Reverse (Max)
Micro Commercial Components GBJ2510S-BP	Standard	-55 °C	150 °C	Single Phase	4-SIP GBJ	25 A	5 µA	Through Hole	1 V	GBJ	1000 V
Micro Commercial Components GBJ2510H-BP	Standard	-55 °C	150 °C	Single Phase	4-SIP GBJ	25 A	10 µA	Through Hole	1.2 V	GBJ		1.6 kV
Micro Commercial Components GBJ2510-BP	Standard	-55 °C	150 °C	Single Phase	4-SIP GBJ	25 A	10 çA	Through Hole	1.05 V	GBJ	1000 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 1 kV Through Hole GBJ

Technical documentation and resources