Discrete Semiconductor Products

SQ3460EV-T1_GE3

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MOSFET N-CH 20V 8A 6TSOP

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Discrete Semiconductor Products

Active

MOSFET N-CH 20V 8A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SQ3460EV-T1_GE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	14 nC
Input Capacitance (Ciss) (Max) @ Vds	1060 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	3.6 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SQ3460EV-T1_GE3	20 V	8 V	Surface Mount	30 mOhm	N-Channel	6-TSOP	14 nC	MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	1060 pF	1.8 V 4.5 V	3.6 W	8 A	1 V	-55 °C	175 ░C

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General part information

N-Channel 20 V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP

Technical documentation and resources