Discrete Semiconductor Products

VT6M1T2CR

LTB

TRANSISTOR: N/P-MOSFET; UNIPOLAR; 20/-20V; 0.1/-0.1A; IDM: 0.4A

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Discrete Semiconductor Products

LTB

TRANSISTOR: N/P-MOSFET; UNIPOLAR; 20/-20V; 0.1/-0.1A; IDM: 0.4A

Technical Specifications

Parameters and characteristics for this part

Specification	VT6M1T2CR

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.2 V
FET Feature [Max]	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds [Max]	7.1 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	120 mW
Rds On (Max) @ Id, Vgs	3.5 Ohm
Supplier Device Package	VMT6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	FET Feature	FET Feature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power - Max [Max]	Supplier Device Package	Technology	Operating Temperature	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Configuration
Rohm Semiconductor VT6M1T2CR	1.2 V	Logic Level Gate	7.1 pF	100 mA	20 V	1 V	120 mW	VMT6	MOSFET (Metal Oxide)	150 °C	6-SMD Flat Leads	Surface Mount	3.5 Ohm	N and P-Channel

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