Discrete Semiconductor Products

SIHW47N60E-GE3

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MOSFET N-CH 600V 47A TO247AD

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Discrete Semiconductor Products

Active

MOSFET N-CH 600V 47A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	SIHW47N60E-GE3

Current - Continuous Drain (Id) @ 25°C	47 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	220 nC
Input Capacitance (Ciss) (Max) @ Vds	9620 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3P-3 Full Pack
Power Dissipation (Max)	357 W
Rds On (Max) @ Id, Vgs	64 mOhm
Supplier Device Package	TO-247AD
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIHW47N60E-GE3	MOSFET (Metal Oxide)	Through Hole	TO-3P-3 Full Pack	TO-247AD	-55 °C	150 °C	4 V	10 V	47 A	64 mOhm	357 W	20 V	N-Channel	220 nC	600 V	9620 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 47A (Tc) 357W (Tc) Through Hole TO-247AD

Technical documentation and resources