Discrete Semiconductor Products

PCP1405-TD-H

Obsolete

MOSFET N-CH 250V 600MA SOT89

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 250V 600MA SOT89

Technical Specifications

Parameters and characteristics for this part

Specification	PCP1405-TD-H

Current - Continuous Drain (Id) @ 25°C	600 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	140 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power Dissipation (Max)	3.5 W
Rds On (Max) @ Id, Vgs	6.5 Ohm
Supplier Device Package	SOT-89/PCP-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1.3 V

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature
ON Semiconductor PCP1405-TD-H	600 mA	2.1 nC	140 pF	2.5 V 4.5 V	6.5 Ohm	TO-243AA	Surface Mount	1.3 V	10 V	SOT-89/PCP-1	3.5 W	MOSFET (Metal Oxide)	250 V	N-Channel	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 600mA (Ta) 3.5W (Tc) Surface Mount SOT-89/PCP-1

Technical documentation and resources

No documents available