Discrete Semiconductor Products

SIA466EDJ-T1-GE3

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MOSFET N-CH 20V 25A PPAK SC70-6

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Discrete Semiconductor Products

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MOSFET N-CH 20V 25A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA466EDJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	620 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W
Power Dissipation (Max)	19.2 W
Rds On (Max) @ Id, Vgs [Max]	9.5 mOhm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [x]	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Supplier Device Package	Power Dissipation (Max)	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIA466EDJ-T1-GE3	-55 °C	150 °C	25 A	9.5 mOhm	20 nC	Surface Mount	20 V	2.5 V	20 V	N-Channel	PowerPAK® SC-70-6	3.5 W	19.2 W	MOSFET (Metal Oxide)	4.5 V 10 V	PowerPAK® SC-70-6	620 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 25A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources