Discrete Semiconductor Products

S85JR

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DIODE GEN PURP REV 600V 85A DO5

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Discrete Semiconductor Products

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DIODE GEN PURP REV 600V 85A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	S85JR

Current - Average Rectified (Io)	85 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	180 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-5, DO-203AB
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-5
Technology	Reverse Polarity, Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Technology	Supplier Device Package	Speed [Min]	Current - Average Rectified (Io)
GeneSiC Semiconductor S85JR	600 V	1.1 V	10 µA	Chassis Stud Mount	-65 C	180 °C	DO-203AB DO-5 Stud	Reverse Polarity Standard	DO-5	200 mA 500 ns	85 A

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General part information

Diode 600 V 85A Chassis, Stud Mount DO-5

Technical documentation and resources