Discrete Semiconductor Products
HT8MC5TB1
ActiveRohm Semiconductor
60V 10A/11.5A, DUAL NCH+PCH, HSMT8, POWER MOSFET
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Search across all available documentation for this part.
Discrete Semiconductor Products
HT8MC5TB1
ActiveRohm Semiconductor
60V 10A/11.5A, DUAL NCH+PCH, HSMT8, POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | HT8MC5TB1 |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4 A, 11.5 A, 3.5 A, 10 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.1 nC, 17.1 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 135 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Power - Max | 2 W, 13 W |
| Rds On (Max) @ Id, Vgs | 90 mOhm, 97 mOhm |
| Supplier Device Package [custom] | 8-HSMT |
| Supplier Device Package [x] | 3.2 |
| Supplier Device Package [y] | 3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 3000 | $ 1.91 | |
Description
General part information
HT8MC5 Series
HT8MC5 is a power MOSFET with low on-resistance and High power small mold package, suitable for Switching and Motor drives applications.
Documents
Technical documentation and resources