Discrete Semiconductor Products

FQB34P10TM-F085P

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MOSFET P-CH 100V 33.5A D2PAK

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Discrete Semiconductor Products

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MOSFET P-CH 100V 33.5A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	FQB34P10TM-F085P

Current - Continuous Drain (Id) @ 25°C	33.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	2910 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.75 W, 155 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max)	Mounting Type
ON Semiconductor FQB34P10TM-F085P	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 V	60 mOhm	TO-263 (D2PAK)	110 nC	P-Channel	33.5 A	MOSFET (Metal Oxide)	2910 pF	10 V	4 V	-55 °C	175 ░C	25 V	3.75 W 155 W	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 100 V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources