Specification	RJK5014DPP-E0#T2

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	46 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	35 W
Rds On (Max) @ Id, Vgs	390 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

RJK5014DPP-E0 Series

Nch Single Power Mosfet 500V 19A 390Mohm To-220Fp

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature	Vgs(th) (Max) @ Id
Renesas Electronics Corporation RJK5014DPP-E0#T2	46 nC	500 V	30 V	1800 pF	Through Hole	19 A	MOSFET (Metal Oxide)	TO-220FP	35 W	10 V	TO-220-3 Full Pack	N-Channel	390 mOhm	150 °C
Renesas Electronics Corporation RJK5014DPP-E0#T2	46 nC	500 V	30 V	1800 pF	Through Hole	19 A	MOSFET (Metal Oxide)	TO-220FP	35 W	10 V	TO-220-3 Full Pack	N-Channel	390 mOhm	150 °C	4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The RJK5014DPP-E0 is a Nch Single Power Mosfet 500V 19A 390Mohm To-220Fp.

Technical documentation and resources