Discrete Semiconductor Products

FDS9412A

Obsolete

ON Semiconductor

MOSFET N-CH 30V 8A 8SOIC

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Discrete Semiconductor Products

FDS9412A

Obsolete

ON Semiconductor

MOSFET N-CH 30V 8A 8SOIC

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS9412A

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	985 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

FDS9431A_F085 Series

P-Channel PowerTrench<sup>®</sup> MOSFET, 30V, -3.4A, 130mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Grade	Qualification	Gate Charge (Qg) (Max) @ Vgs [x]
ON Semiconductor FDS9400A	205 pF	-55 °C	175 ░C	8-SOIC	3.9 mm	0.154 in	8-SOIC	P-Channel	4.5 V 10 V	3.5 nC	3.4 A	30 V	130 mOhm	25 V	MOSFET (Metal Oxide)	2.5 W	3 V	Surface Mount
ON Semiconductor FDS9431A-F085	405 pF	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC	P-Channel	2.5 V 4.5 V		3.5 A	20 V	130 mOhm	8 V	MOSFET (Metal Oxide)	2.5 W	1 V	Surface Mount	8.5 nC	Automotive	AEC-Q101
ON Semiconductor FDS9412A	985 pF	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	8-SOIC	N-Channel	4.5 V 10 V		8 A	30 V	21 mOhm	20 V	MOSFET (Metal Oxide)	2.5 W	2.5 V	Surface Mount				20 nC
ON Semiconductor FDS9400A	205 pF	-55 °C	175 ░C	8-SOIC	3.9 mm	0.154 in	8-SOIC	P-Channel	4.5 V 10 V	3.5 nC	3.4 A	30 V	130 mOhm	25 V	MOSFET (Metal Oxide)	2.5 W	3 V	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDS9431A_F085 Series

This P-Channel 2.5V specified MOSFET is produced using a proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Documents

Technical documentation and resources