
IXTA06N120P-TRL
ActiveMOSFET N-CH 1200V 600MA TO263
Deep-Dive with AI
Search across all available documentation for this part.

IXTA06N120P-TRL
ActiveMOSFET N-CH 1200V 600MA TO263
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTA06N120P-TRL |
|---|---|
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 13.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 236 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 42 W |
| Rds On (Max) @ Id, Vgs | 34 Ohm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IXTA06N120P Series
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density
Documents
Technical documentation and resources