Discrete Semiconductor Products

HAF1002-90STL-E

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MOSFET P-CH 60V 15A 4LDPAK

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Discrete Semiconductor Products

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MOSFET P-CH 60V 15A 4LDPAK

Technical Specifications

Parameters and characteristics for this part

Specification	HAF1002-90STL-E

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-83
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	90 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	3 V
Vgs (Max) [Min]	-16 V

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max) [Min]	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	FET Type	Power Dissipation (Max) [Max]	Package / Case	Operating Temperature	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation HAF1002-90STL-E	4 V	10 V	-16 V	3 V	60 V	90 mOhm	MOSFET (Metal Oxide)	Surface Mount	P-Channel	50 W	SC-83	150 °C	15 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 15A (Ta) 50W (Tc) Surface Mount LDPAK

Technical documentation and resources