CSD13202Q2T

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CSD13202Q2T

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Technical Specifications

Parameters and characteristics for this part

Specification	CSD13202Q2T

Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.6 nC
Input Capacitance (Ciss) (Max) @ Vds	997 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	2.7 W
Rds On (Max) @ Id, Vgs	9.3 mOhm
Supplier Device Package	6-WSON (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.1 V

CSD13202Q2 Series

12-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 9.3 mOhm

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
Texas Instruments CSD13202Q2T	9.3 mOhm	6.6 nC	8 V	MOSFET (Metal Oxide)	2.7 W	1.1 V	-55 °C	150 °C	N-Channel	Surface Mount	2.5 V 4.5 V	997 pF	6-WSON (2x2)	12 V
Texas Instruments CSD13202Q2	9.3 mOhm	6.6 nC	8 V	MOSFET (Metal Oxide)	2.7 W	1.1 V	-55 °C	150 °C	N-Channel	Surface Mount	2.5 V 4.5 V	997 pF	6-WSON (2x2)	12 V	22 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

CSD13202Q2 Series

This 12-V, 7.5-mΩ NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2 × 2 offers excellent thermal performance for the size of the package.

Documents

Technical documentation and resources