Specification	FQU13N10LTU

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	520 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	40 W, 2.5 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

FQU13N10L Series

Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, IPAK

Part	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FQU13N10LTU	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	100 V	-55 °C	150 °C	10 V	5 V	MOSFET (Metal Oxide)	N-Channel	520 pF	IPAK	180 mOhm	2 V	10 A	2.5 W 40 W	20 V	12 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQU13N10L Series

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.