Discrete Semiconductor Products

VS-150EBU02HF4

Obsolete

DIODE GP 200V 150A POWERTAB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GP 200V 150A POWERTAB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-150EBU02HF4

Current - Average Rectified (Io)	150 A
Current - Reverse Leakage @ Vr	50 µA
Grade	Automotive
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	PowerTab®
Qualification	AEC-Q101
Speed [Min]	200 mA, 500 ns
Supplier Device Package	PowerTab®
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Grade	Qualification	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed [Min]	Reverse Recovery Time (trr)	Speed
Vishay General Semiconductor - Diodes Division VS-150EBU02HF4	Automotive	AEC-Q101	175 ░C	-55 °C	150 A	PowerTab®	Chassis Mount	200 V	1.1 V	Standard	PowerTab®	50 µA	200 mA 500 ns
Vishay General Semiconductor - Diodes Division VS-150EBU02			175 ░C	-55 °C	150 A	PowerTab™ PowIRtab™	Chassis Mount	200 V	1.13 V	Standard	PowIRtab™	50 µA		45 ns	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 4.19

General part information

Diode 200 V 150A Chassis Mount PowerTab®

Technical documentation and resources

No documents available