Discrete Semiconductor Products

VS-6ESH06HM3/87A

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DIODE GEN PURP 600V 6A TO277A

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 6A TO277A

Technical Specifications

Parameters and characteristics for this part

Specification	VS-6ESH06HM3/87A

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	3-PowerDFN, TO-277
Qualification	AEC-Q101
Reverse Recovery Time (trr)	40 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-277A (SMPC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Reverse Recovery Time (trr)	Package / Case	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Reverse Leakage @ Vr	Mounting Type	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Qualification	Grade
Vishay General Semiconductor - Diodes Division VS-6ESH06-M3/86A	40 ns	3-PowerDFN TO-277	1.8 V	200 mA 500 ns	5 µA	Surface Mount	TO-277A (SMPC)	600 V	6 A	Standard	175 ░C	-65 C
Vishay General Semiconductor - Diodes Division VS-6ESH06-M3/87A	40 ns	3-PowerDFN TO-277	1.8 V	200 mA 500 ns	5 µA	Surface Mount	TO-277A (SMPC)	600 V	6 A	Standard	175 ░C	-65 C
Vishay General Semiconductor - Diodes Division VS-6ESH06HM3/87A	40 ns	3-PowerDFN TO-277	1.8 V	200 mA 500 ns	5 µA	Surface Mount	TO-277A (SMPC)	600 V	6 A	Standard	175 ░C	-65 C	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 6A Surface Mount TO-277A (SMPC)

Technical documentation and resources