Discrete Semiconductor Products

UPA2211T1M-T1-AT

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2211T1M-T1-AT

Current - Continuous Drain (Id) @ 25°C	7.5 A
Drain to Source Voltage (Vdss)	12 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	14.9 nC
Input Capacitance (Ciss) (Max) @ Vds	1350 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SMD, Flat Lead
Power Dissipation (Max)	1.1 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	8-VSOF
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

N-Channel Mos Field Effect Transistor For Switching

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Operating Temperature	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation UPA2211T1M-T1-AT	7.5 A	Surface Mount	1.1 W	150 °C	8-SMD Flat Lead	MOSFET (Metal Oxide)	25 mOhm	1350 pF	P-Channel	1.5 V	14.9 nC	8-VSOF	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	26367	$ 1.19

General part information

The UPA2211T1M is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources