Discrete Semiconductor Products

R6011KND3TL1

NRND

600V 11A TO-252 (DPAK), HIGH-SPEED SWITCHING POWER MOSFET

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Discrete Semiconductor Products

NRND

600V 11A TO-252 (DPAK), HIGH-SPEED SWITCHING POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	R6011KND3TL1

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	740 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	124 W
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

600V 11A TO-252 (DPAK), High-speed switching Power MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Rohm Semiconductor R6011KND3TL1	11 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	5 V	Surface Mount	150 °C	740 pF	124 W	22 nC	TO-252	600 V	MOSFET (Metal Oxide)	N-Channel	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET R6011KND3 is suitable for switching power supply.

Technical documentation and resources