Discrete Semiconductor Products

MCPF12N65-BP

Obsolete

MOSFET N-CH

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH

Technical Specifications

Parameters and characteristics for this part

Specification	MCPF12N65-BP

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs [Max]	850 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	FET Type	Package / Case
Micro Commercial Components MCPF12N65-BP	10 V	1800 pF	4 V	TO-220F	30 V	12 A	5 nC	Through Hole	-55 °C	150 °C	850 mOhm	MOSFET (Metal Oxide)	650 V	N-Channel	TO-220-3 Full Pack

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 12A 2W Through Hole TO-220F

Technical documentation and resources