
IXFN24N100
NRNDDISCMSFT NCH HIPERFETS-STD SOT-227B(MINI
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IXFN24N100
NRNDDISCMSFT NCH HIPERFETS-STD SOT-227B(MINI
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXFN24N100 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 24 A |
| Drain to Source Voltage (Vdss) | 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 267 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 8700 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) [Max] | 568 W |
| Rds On (Max) @ Id, Vgs | 390 mOhm |
| Supplier Device Package | SOT-227B |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 5.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 300 | $ 34.37 | |
Description
General part information
IXFN24N100 Series
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types. Advantages: Easy to mount Space savings High power density
Documents
Technical documentation and resources