Specification	FDH45N50F-F133

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	137 nC
Input Capacitance (Ciss) (Max) @ Vds	6630 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	625 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDH45N50 Series

Part	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDH45N50F-F133	5 V	Through Hole	137 nC	10 V	TO-247-3	TO-247-3	6630 pF	625 W	30 V	MOSFET (Metal Oxide)	120 mOhm	500 V	N-Channel	45 A	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

R DS(on) = 105 m O (Typ.) @ V GS = 10 V, I D = 22.5 A

Low Gate Charge (Typ. 105 nC)

Low C rss (Typ. 62 pF)

Technical documentation and resources