Specification	FQD3N60CTM-WS

Current - Continuous Drain (Id) @ 25°C	2.4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	565 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	3.4 Ohm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQD3N60CTM-WS Series

Power MOSFET, N-Channel, QFET®, 600 V, 2.4 A, 3.4 Ω, DPAK

Part	FET Type	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package
ON Semiconductor FQD3N60CTM-WS	N-Channel	MOSFET (Metal Oxide)	600 V	50 W	30 V	3.4 Ohm	Surface Mount	4 V	2.4 A	565 pF	10 V	-55 °C	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	14 nC	TO-252AA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQD3N60CTM-WS Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.