Discrete Semiconductor Products

SIHH20N50E-T1-GE3

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MOSFET N-CH 500V 22A PPAK 8 X 8

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Discrete Semiconductor Products

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MOSFET N-CH 500V 22A PPAK 8 X 8

Technical Specifications

Parameters and characteristics for this part

Specification	SIHH20N50E-T1-GE3

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	84 nC
Input Capacitance (Ciss) (Max) @ Vds	2063 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	174 W
Rds On (Max) @ Id, Vgs	147 mOhm
Supplier Device Package	PowerPAK® 8 x 8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)
Vishay General Semiconductor - Diodes Division SIHH20N50E-T1-GE3	PowerPAK® 8 x 8	10 V	147 mOhm	8-PowerTDFN	4 V	-55 °C	150 °C	84 nC	Surface Mount	MOSFET (Metal Oxide)	2063 pF	22 A	174 W	N-Channel	500 V	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	3000	$ 2.18

General part information

N-Channel 500 V 22A (Tc) 174W (Tc) Surface Mount PowerPAK® 8 x 8

Technical documentation and resources