Discrete Semiconductor Products

SI8406DB-T2-E1

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MOSFET N-CH 20V 16A 6MICRO FOOT

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Discrete Semiconductor Products

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MOSFET N-CH 20V 16A 6MICRO FOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8406DB-T2-E1

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC
Input Capacitance (Ciss) (Max) @ Vds	830 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFBGA
Power Dissipation (Max)	13 W, 2.77 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	6-Micro Foot™ (1.5x1)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	850 mV

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Vishay General Semiconductor - Diodes Division SI8406DB-T2-E1	1.8 V 4.5 V	-55 °C	150 °C	6-UFBGA	N-Channel	20 V	850 mV	6-Micro Foot™ (1.5x1)	2.77 W 13 W	MOSFET (Metal Oxide)	20 nC	33 mOhm	8 V	830 pF	16 A	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

Technical documentation and resources