Discrete Semiconductor Products

GSIB660-E3/45

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BRIDGE RECT 1P 600V 2.8A GSIB-5S

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Discrete Semiconductor Products

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BRIDGE RECT 1P 600V 2.8A GSIB-5S

Technical Specifications

Parameters and characteristics for this part

Specification	GSIB660-E3/45

Current - Average Rectified (Io)	2.8 A
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	GSIB-5S, 4-SIP
Supplier Device Package	GSIB-5S
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	950 mV
Voltage - Peak Reverse (Max) [Max]	600 V

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Diode Type	Voltage - Peak Reverse (Max) [Max]	Mounting Type	Technology	Current - Average Rectified (Io)	Package / Case	Current - Reverse Leakage @ Vr	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division GSIB660-E3/45	950 mV	Single Phase	600 V	Through Hole	Standard	2.8 A	4-SIP GSIB-5S	10 µA	-55 °C	150 °C	GSIB-5S
Vishay General Semiconductor - Diodes Division GSIB660N-M3/45	950 mV	Single Phase	600 V	Through Hole	Standard	6 A	4-SIP GSIB-5S	10 µA	-55 °C	150 °C	GSIB-5S

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 600 V Through Hole GSIB-5S

Technical documentation and resources