Discrete Semiconductor Products

PMF250XN,115

Obsolete

MOSFET N-CH 30V 900MA SOT323-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 900MA SOT323-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMF250XN,115

Current - Continuous Drain (Id) (Ta)	900 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	1.1 nC
Input Capacitance (Ciss) (Max)	50 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-70, SOT-323
Package Name	SC-70
Power Dissipation (Max)	1.065 W, 275 mW
Rds On (Max)	300 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

Part	FET Type	Gate Charge (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Package Name	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Package / Case	Power Dissipation (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Technology
NXP USA Inc. PMF250XN,115	N-Channel	1.1 nC	12 V	30 V	SC-70	1.5 V	50 pF	-55 °C	150 °C	Surface Mount	SC-70 SOT-323	1.065 W 275 mW	2.5 V	4.5 V	900 mA	300 mOhm	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 900mA (Ta) 275mW (Ta), 1.065W (Tc) Surface Mount SC-70

Technical documentation and resources

No documents available