Specification	MTP12P10G

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	920 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power Dissipation (Max)	75 W
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

MTP12P10 Series

Power MOSFET 12 Amps, 100 Volts, P Channel TO-220

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
ON Semiconductor MTP12P10G	10 V	150 °C	-65 °C	100 V	TO-220	TO-220-3	12 A	920 pF	P-Channel	MOSFET (Metal Oxide)	4.5 V	20 V	75 W	50 nC	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MTP12P10 Series

This Power MOSFET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

Documents

Technical documentation and resources

Datasheet

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing