Discrete Semiconductor Products

TSC5804DCHC5G

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TRANS NPN 450V 5A TO251

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Discrete Semiconductor Products

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TRANS NPN 450V 5A TO251

Technical Specifications

Parameters and characteristics for this part

Specification	TSC5804DCHC5G

Current - Collector (Ic) (Max) [Max]	5 A
Current - Collector Cutoff (Max) [Max]	250 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power - Max [Max]	45 W
Supplier Device Package	IPAK
Supplier Device Package	TO-251
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	450 V

Part	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]
Taiwan Semiconductor Corporation TSC5804DCHC5G	150 °C	250 µA	IPAK	TO-251	25 hFE	IPAK TO-251-3 Short Leads TO-251AA	2 V	45 W	5 A	NPN	Through Hole	450 V
Taiwan Semiconductor Corporation TSC5804DCP ROG	150 °C	250 µA		TO-252 (DPAK)	25 hFE	DPAK (2 Leads + Tab) SC-63 TO-252-3	2 V	45 W	5 A	NPN	Surface Mount	450 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Bipolar (BJT) Transistor NPN 450 V 5 A 45 W Through Hole TO-251 (IPAK)

Technical documentation and resources