Discrete Semiconductor Products

PMV33UPE,215

Active

MOSFET P-CH 20V 4.4A TO236AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 20V 4.4A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMV33UPE,215

Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	22.1 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	490 mW
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type
Freescale Semiconductor - NXP PMV33UPE,215	490 mW	4.4 A	MOSFET (Metal Oxide)	1.8 V 4.5 V	P-Channel	SC-59 SOT-23-3 TO-236-3	950 mV	TO-236AB	8 V	20 V	22.1 nC	36 mOhm	-55 °C	150 °C	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 4.4A (Ta) 490mW (Ta) Surface Mount TO-236AB

Technical documentation and resources