Discrete Semiconductor Products

IPS60R800CEAKMA1

Obsolete

CONSUMER

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

CONSUMER

Technical Specifications

Parameters and characteristics for this part

Specification	IPS60R800CEAKMA1

Current - Continuous Drain (Id) @ 25°C	8.4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17.2 nC
Input Capacitance (Ciss) (Max) @ Vds	373 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	74 W
Rds On (Max) @ Id, Vgs [Max]	800 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	3.5 V

Part	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	FET Type	Vgs(th) (Max) @ Id [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IPS60R800CEAKMA1	IPAK TO-251-3 Short Leads TO-251AA	600 V	8.4 A	74 W	-40 °C	150 °C	PG-TO251-3	MOSFET (Metal Oxide)	800 mOhm	Through Hole	N-Channel	3.5 V	20 V	10 V	17.2 nC	373 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 8.4A (Tj) 74W (Tc) Through Hole PG-TO251-3

Technical documentation and resources