Discrete Semiconductor Products
IRF2204PBF
ActiveINFINEON
IR MOSFET™ N-CHANNEL ; TO-220 PACKAGE; 3.6 MOHM;
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Discrete Semiconductor Products
IRF2204PBF
ActiveINFINEON
IR MOSFET™ N-CHANNEL ; TO-220 PACKAGE; 3.6 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF2204PBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 210 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 200 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5890 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 330 W |
| Rds On (Max) @ Id, Vgs | 3.6 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1128 | $ 3.06 | |
| Tube | 1 | $ 2.75 | ||
| 10 | $ 1.79 | |||
| 100 | $ 1.24 | |||
| 500 | $ 1.01 | |||
| 1000 | $ 1.00 | |||
Description
General part information
IRF2204 Series
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.