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TO-262-3
Discrete Semiconductor Products

IRFSL7530PBF

Obsolete
INFINEON

STRONGIRFET™ N-CHANNEL POWER MOSFET ; I2PAK TO-262 PACKAGE; 2 MOHM;

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TO-262-3
Discrete Semiconductor Products

IRFSL7530PBF

Obsolete
INFINEON

STRONGIRFET™ N-CHANNEL POWER MOSFET ; I2PAK TO-262 PACKAGE; 2 MOHM;

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFSL7530PBF
Current - Continuous Drain (Id) @ 25°C195 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]411 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]13703 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)375 W
Rds On (Max) @ Id, Vgs0.002 mOhm
Supplier Device PackageTO-262
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IRFSL7530 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.