Discrete Semiconductor Products

SI7425DN-T1-E3

Obsolete

MOSFET P-CH 12V 8.3A PPAK 1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 8.3A PPAK 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7425DN-T1-E3

Current - Continuous Drain (Id) (Ta)	8.3 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	39 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max)	16 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

Part	Package / Case	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Power Dissipation (Max)	Vgs(th) (Max)	Rds On (Max)
Vishay Dale SI7425DN-T1-GE3	PowerPAK® 1212-8	8.3 A	-55 °C	150 °C	Surface Mount	P-Channel	12 V	8 V	MOSFET (Metal Oxide)	39 nC	4.5 V	1.8 V	PowerPAK® 1212-8	1.5 W	1 V	16 mOhm
Vishay Dale SI7425DN-T1-E3	PowerPAK® 1212-8	8.3 A	-55 °C	150 °C	Surface Mount	P-Channel	12 V	8 V	MOSFET (Metal Oxide)	39 nC	4.5 V	1.8 V	PowerPAK® 1212-8	1.5 W	1 V	16 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 12 V 8.3A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources