Discrete Semiconductor Products

SUM33N20-60P-E3

Obsolete

MOSFET N-CH 200V 33A TO263

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 33A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM33N20-60P-E3

Current - Continuous Drain (Id) (Tc)	33 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On)	10 V
Drive Voltage (Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Max)	113 nC
Input Capacitance (Ciss) (Max)	2735 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	156 W, 3.12 W
Rds On (Max)	59 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	4.5 V

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Rds On (Max)	Mounting Type	Gate Charge (Max)	Package / Case	Vgs(th) (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Power Dissipation (Max)
Vishay Dale SUM33N20-60P-E3	200 V	25 V	2735 pF	MOSFET (Metal Oxide)	-55 °C	175 °C	TO-263 (D2PAK)	59 mOhm	Surface Mount	113 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V	N-Channel	33 A	10 V	15 V	3.12 W 156 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 200 V 33A (Tc) 3.12W (Ta), 156W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources

No documents available