Discrete Semiconductor Products

SSM10N961L,ELF

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 COMMON-DRAIN MOSFET, 30 V, 14.0 A, 9.9 MΩ@10 V, TCSPAG-341501

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 COMMON-DRAIN MOSFET, 30 V, 14.0 A, 9.9 MΩ@10 V, TCSPAG-341501

Technical Specifications

Parameters and characteristics for this part

Specification	SSM10N961L,ELF

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	17.3 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	10-XFLGA, CSP
Power - Max	880 mW
Supplier Device Package	TCSPAG-341501
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.3 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 Common-drain MOSFET, 30 V, 14.0 A, 9.9 mΩ@10 V, TCSPAG-341501

Part	Technology	Configuration	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Power - Max	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM10N961L,ELF	MOSFET (Metal Oxide)	2 N-Channel	9 A	2.3 V	Surface Mount	17.3 nC	150 °C	880 mW	10-XFLGA CSP	TCSPAG-341501	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	8885	$ 1.17

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 Common-drain MOSFET, 30 V, 14.0 A, 9.9 mΩ@10 V, TCSPAG-341501

Technical documentation and resources