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PBHV9115TLH-QR
Discrete Semiconductor Products

PBHV9115TLH-QR

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Nexperia USA Inc.

150 V, 1 A PNP HIGH-VOLTAGE LOW VCESAT TRANSISTOR

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PBHV9115TLH-QR
Discrete Semiconductor Products

PBHV9115TLH-QR

Active
Nexperia USA Inc.

150 V, 1 A PNP HIGH-VOLTAGE LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBHV9115TLH-QR
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]70
Frequency - Transition55 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
QualificationAEC-Q101
Supplier Device PackageTO-236AB
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic120 mV
Voltage - Collector Emitter Breakdown (Max) [Max]150 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2180$ 0.77

Description

General part information

PBHV9115TLH-Q Series

PNP high-voltage low VCEsattransistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.