Discrete Semiconductor Products

NTMFS1D15N03CGT1G

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MOSFET, POWER 30V N-CHANNEL, SO8FL

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Discrete Semiconductor Products

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MOSFET, POWER 30V N-CHANNEL, SO8FL

Technical Specifications

Parameters and characteristics for this part

Specification	NTMFS1D15N03CGT1G

Current - Continuous Drain (Id) @ 25°C	245 A, 43 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC
Input Capacitance (Ciss) (Max) @ Vds	7300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	3.8 W, 124 W
Rds On (Max) @ Id, Vgs	1.15 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

MOSFET, Power 30V N-Channel, SO8FL

Part	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NTMFS1D15N03CGT1G	-55 °C	175 ░C	N-Channel	10 V	5-DFN (5x6)	8-SOFL	1.15 mOhm	Surface Mount	43 A 245 A	7300 pF	2.2 V	8-PowerTDFN 5 Leads	MOSFET (Metal Oxide)	30 V	20 V	3.8 W 124 W	94 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	1500	$ 0.73
		3000	$ 0.69
Newark	Each	1000	$ 0.92
		2500	$ 0.74
		5000	$ 0.72
ON Semiconductor	N/A	1	$ 0.64

General part information

Power MOSFET, 30V N-Channel, 1.15mΩ, 248A, SO8FL 5x6mm

Technical documentation and resources