Discrete Semiconductor Products

BSL316CL6327HTSA1

Obsolete

MOSFET N/P-CH 30V 1.4A TSOP6-6

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 30V 1.4A TSOP6-6

Technical Specifications

Parameters and characteristics for this part

Specification	BSL316CL6327HTSA1

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	1.5 A, 1.4 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	0.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	94 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6 Thin, TSOT-23-6
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	PG-TSOP6-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Drain to Source Voltage (Vdss)	Configuration	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	FET Feature	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Power - Max [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Grade
INFINEON BSL316CL6327HTSA1	30 V	N and P-Channel	160 mOhm	Surface Mount	MOSFET (Metal Oxide)	Logic Level Gate	SOT-23-6 Thin TSOT-23-6	94 pF	PG-TSOP6-6	500 mW	2 V	0.6 nC	1.4 A 1.5 A	150 °C	-55 °C
INFINEON BSL316CH6327XTSA1	30 V	N and P-Channel Complementary	160 mOhm	Surface Mount	MOSFET (Metal Oxide)	Logic Level Gate	SOT-23-6 Thin TSOT-23-6		PG-TSOP6-6	500 mW	2 V	0.6 nC	1.4 A 1.5 A	150 °C	-55 °C	4.5 V	282 pF	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Mosfet Array 30V 1.4A, 1.5A 500mW Surface Mount PG-TSOP6-6

Technical documentation and resources

No documents available