Discrete Semiconductor Products

BSO203PHXUMA1

Obsolete

MOSFET 2P-CH 20V 7A 8DSO

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Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 20V 7A 8DSO

Technical Specifications

Parameters and characteristics for this part

Specification	BSO203PHXUMA1

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	39 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	1.6 W
Rds On (Max) @ Id, Vgs	21 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power - Max [Max]	Configuration	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Package / Case	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type
INFINEON BSO203PNTMA1	48.6 nC	MOSFET (Metal Oxide)	8.2 A	20 V	1.2 V	2 W	2 P-Channel (Dual)	Logic Level Gate	2242 pF	0.154 in	8-SOIC	3.9 mm	Surface Mount	21 mOhm	150 °C	-55 °C
INFINEON BSO203PHXUMA1		MOSFET (Metal Oxide)	7 A	20 V	1.2 V	1.6 W	2 P-Channel (Dual)	Logic Level Gate	3750 pF	0.154 in	8-SOIC	3.9 mm	Surface Mount	21 mOhm	150 °C	-55 °C	39 nC
INFINEON BSO203SPHXUMA1		MOSFET (Metal Oxide)	7 A	20 V	1.2 V					0.154 in	8-SOIC	3.9 mm	Surface Mount		150 °C	-55 °C	39 nC	2.5 V	4.5 V	12 V	3750 pF	P-Channel

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General part information

Mosfet Array 20V 7A 1.6W Surface Mount PG-DSO-8

Technical documentation and resources