Discrete Semiconductor Products

IXTH360N055T2

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Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 55V 360A 3-PIN(3+TAB) TO-247

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Discrete Semiconductor Products

IXTH360N055T2

Active

Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 55V 360A 3-PIN(3+TAB) TO-247

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH360N055T2

Current - Continuous Drain (Id) @ 25°C	360 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	330 nC
Input Capacitance (Ciss) (Max) @ Vds	20000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	935 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IXTH360N055T2 Series

DiscMSFT NChTrenchGate-Gen2 TO-247AD

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id
Littelfuse/Commercial Vehicle Products IXTH360N055T2	10 V	MOSFET (Metal Oxide)	360 A	N-Channel	55 V	-55 °C	175 ░C	Through Hole	20 V	20000 pF	2.4 mOhm	330 nC	935 W	TO-247 (IXTH)	TO-247-3	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 7.89
LCSC	Piece	1	$ 2.37
		210	$ 0.95
		510	$ 0.91
		990	$ 0.90
Newark	Each	250	$ 6.89
		500	$ 6.40

Description

General part information

IXTH360N055T2 Series

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost

Documents

Technical documentation and resources