Discrete Semiconductor Products

IRF7389TR

Obsolete

MOSFET N/P-CH 30V 8SO

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 30V 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7389TR

Configuration	N and P-Channel
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	33 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	650 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2.5 W
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	FET Feature	Package / Case	Package / Case	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology
INFINEON IRF7389TR	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	33 nC	2.5 W	8-SO	29 mOhm	1 V	Surface Mount	150 °C	-55 °C	N and P-Channel	650 pF	MOSFET (Metal Oxide)
INFINEON IRF7389	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	33 nC	2.5 W	8-SO	29 mOhm	1 V	Surface Mount	150 °C	-55 °C	N and P-Channel	650 pF	MOSFET (Metal Oxide)
INFINEON IRF7389TRPBF	30 V	Logic Level Gate	0.154 in	8-SOIC	3.9 mm	33 nC	2.5 W	8-SO	29 mOhm	1 V	Surface Mount	150 °C	-55 °C	N and P-Channel	650 pF	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.86