Discrete Semiconductor Products

SPI12N50C3XKSA1

Obsolete

MOSFET N-CH 560V 11.6A TO262-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 560V 11.6A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPI12N50C3XKSA1

Current - Continuous Drain (Id) @ 25°C	11.6 A
Drain to Source Voltage (Vdss)	560 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	49 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs [Max]	380 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs (Max)
INFINEON SPI12N50C3XKSA1	49 nC	1200 pF	I2PAK TO-262-3 Long Leads TO-262AA	560 V	MOSFET (Metal Oxide)	150 °C	-55 °C	10 V	Through Hole	3.9 V	N-Channel	380 mOhm	11.6 A	125 W	20 V

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General part information

N-Channel 560 V 11.6A (Tc) 125W (Tc) Through Hole PG-TO262-3-1

Technical documentation and resources