
LTC4444MPMS8E-5#PBF
ActiveHIGH VOLTAGE SYNCHRONOUS N-CHANNEL MOSFET DRIVER
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LTC4444MPMS8E-5#PBF
ActiveHIGH VOLTAGE SYNCHRONOUS N-CHANNEL MOSFET DRIVER
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Technical Specifications
Parameters and characteristics for this part
| Specification | LTC4444MPMS8E-5#PBF |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 2.5 A |
| Current - Peak Output (Source, Sink) [custom] | 3 A |
| Driven Configuration | Half-Bridge |
| Gate Type | MOSFET (N-Channel) |
| High Side Voltage - Max (Bootstrap) [Max] | 114 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 3.25 V, 1.85 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3 mm, 0.118 in |
| Package / Case | Exposed Pad, 8-MSOP, 8-TSSOP |
| Rise / Fall Time (Typ) [custom] | 5 ns |
| Rise / Fall Time (Typ) [custom] | 8 ns |
| Supplier Device Package | 8-MSOP-EP |
| Voltage - Supply [Max] | 13.5 V |
| Voltage - Supply [Min] | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
LTC4444-5 Series
The LTC4444-5 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. This powerful driver reduces switching losses in MOSFETs with high gate capacitance.The LTC4444-5 is configured for two supply-independent inputs. The high side input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 114V above ground.The LTC4444-5 contains undervoltage lockout circuits that disable the external MOSFETs when activated. Adaptive shoot-through protection prevents both MOSFETs from conducting simultaneously.ApplicationsDistributed Power ArchitecturesAutomotive Power SuppliesHigh Density Power ModulesTelecommunication Systems
Documents
Technical documentation and resources