Discrete Semiconductor Products

PJD90N03_L2_00001

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30V N-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

Active

30V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJD90N03_L2_00001

Current - Continuous Drain (Id) @ 25°C	90 A, 20 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	35 nC
Input Capacitance (Ciss) (Max) @ Vds	4305 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	2 W, 100 W
Rds On (Max) @ Id, Vgs	2.6 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
Panjit International Inc. PJD90N03_L2_00001	150 °C	-55 °C	4.5 V 10 V	4305 pF	MOSFET (Metal Oxide)	20 A 90 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.6 mOhm	N-Channel	20 V	2.5 V	2 W 100 W	Surface Mount	30 V	TO-252AA	35 nC

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General part information

N-Channel 30 V 20A (Ta), 90A (Tc) 2W (Ta), 100W (Tc) Surface Mount TO-252AA

Technical documentation and resources

No documents available