Discrete Semiconductor Products

RJK6014DPK-00#T0

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MOSFET N-CH 600V 16A TO3P

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Discrete Semiconductor Products

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MOSFET N-CH 600V 16A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	RJK6014DPK-00#T0

Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	575 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Supplier Device Package	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)
Renesas Electronics Corporation RJK6014DPK-00#T0	TO-3P	N-Channel	MOSFET (Metal Oxide)	45 nC	SC-65-3 TO-3P-3	575 mOhm	150 °C	10 V	1800 pF	Through Hole	600 V	30 V	150 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 16A (Ta) 150W (Tc) Through Hole TO-3P

Technical documentation and resources